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  november 2008 rev 7 1/15 15 stgd5nb120sz 5 a - 1200 v - low drop internally clamped igbt features low on-voltage drop (v ce(sat) ) high current capability off losses include tail current high voltage clamping applications light dimmer inrush current limitation pre-heating for electronic lamp ballast description this igbt utilizes the advanced power mesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram 1 3 dpak ipak 3 2 1 table 1. device summary order codes marking package packaging stgd5nb120sz-1 gd5nb120sz ipak tube STGD5NB120SZT4 gd5nb120sz dpak tape and reel www.st.com
contents stgd5nb120sz 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stgd5nb120sz electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25 c 10 a i c (1) collector current (continuous) at t c = 100 c 5a i cp (2) 2. pulse width limited by max. temperature allowed pulsed collector current 10 a i cl (3) 3. v clamp = 80% (v ces ), v ge = 15 v, r g = 10 ? , t j = 150 c turn-off latching current 10 a v ge gate-emitter voltage 20 v v ecr emitter-collector voltage 20 v e as (4) 4. v ce = 50 v , i av = 3.3 a single pulse avalanche energy at t c = 25 c 10 mj single pulse avalanche energy at t c = 100 c 7 mj p tot total dissipation at t c = 25 c 75 w t j operating junction temperature ? 55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case igbt max 1.67 c/w r thj-amb thermal resistance junction-ambient max 100 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics stgd5nb120sz 4/15 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 10 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 5 a v ge = 15 v, i c = 5 a,t c = 125 c 1.3 1.2 2.0 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 25v v ge gate emitter voltage v ce = 2.5 v, i c = 2 a, t c = 25 125 c 6.5 v i ces collector cut-off current (v ge = 0) v ce = 900 v v ce = 900 vt c = 125 c 50 250 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 5 a 5s r g gate resistance 4 k ? table 5. dynamic electrical characteristics symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 430 40 7 pf pf pf
stgd5nb120sz electrical characteristics 5/15 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v, (see figure 18) 690 170 39.6 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v t c = 125 c (see figure 18) 600 185 39 ns ns a/s t c t r (v off ) t d ( off ) t f cross-over time off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v (see figure 18) 4 2.2 12.1 1.13 s s s s t c t r (v off ) t d ( off ) t f cross-over time off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v, t c = 125 c (see figure 18) 5 2.2 12.1 2 s s s s table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in (see figure 18) . if the igbt is offered in a package with a co-pak diode, the co- pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v (see figure 18) 2.59 9 11.59 mj mj mj e on (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 5a r drive = 1 k ? , v ge = 15 v, t c = 125 c (see figure 18) 2.64 10.2 12.68 mj mj mj table 8. functional test symbol parameter test conditions min. typ. max. unit i as unclamped inductive switching current v cc = 50 v, l = 1.8 mh t start = 25 c, r drive = 1 k ? 3.3 a
electrical characteristics stgd5nb120sz 6/15 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs temperature figure 6. gate charge vs gate-source voltage figure 7. capacitance variations
stgd5nb120sz electrical characteristics 7/15 figure 8. normalized gate threshold voltage vs temperature figure 9. collector-emitter on voltage vs collector current figure 10. breakdown voltage vs temperature figure 11. normalized collector-emitter on voltage vs temperature figure 12. switching losses vs gate resistance figure 13. switching losses vs collector current
electrical characteristics stgd5nb120sz 8/15 figure 14. turn-off soa figure 15. thermal impedance 10 k =0.5 0.2 0.1 0.05 s ingle p u l s e 0.01 0.02 -2 10 -1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) zth4
stgd5nb120sz test circuit 9/15 3 test circuit figure 16. test circuit for inductive load switching figure 17. gate charge test circuit figure 18. switching waveform
package mechanical data stgd5nb120sz 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stgd5nb120sz package mechanical data 11/15 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
package mechanical data stgd5nb120sz 12/15 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
stgd5nb120sz packaging mechanical data 13/15 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history stgd5nb120sz 14/15 6 revision history table 9. document revision history date revision changes 06-oct-2003 5 no history because migration 18-jan-2005 6 final datasheet 13-nov-2008 7 insert new value in table 2: absolute maximum ratings
stgd5nb120sz 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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